Method for forming conductive line of semiconductor device

Details Method for forming conductive line of semiconductor device Method for forming conductive line of semiconductor device

1995-11-14

1997-05-13

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438702, 438696, 438672, H01L 21283, H01L 21316

Patent

active

056292384

ABSTRACT:
A method for forming a conductive line uses a fluorine doped oxide layer as an insulating layer between conductive lines. The method comprises the steps of: (a) forming a fluorine doped oxide layer on a semiconductor substrate on which a lower structure is formed; (b) etching the oxide layer of the region where a conductive line is to be formed, thereby forming a trench; (c) forming an insulating layer on the overall surface of the resultant substrate; depositing conductive material on the resultant substrate; and (e) etching back the conductive material so that the conductive material is left on the trench only, thereby forming a conductive line. In this method, the conductive line is formed of aluminum-containing material and the insulating layer is formed of silicon dioxide. In the present invention, the insulating layer is interposed between the fluorine doped oxide layer and the aluminum-containing conductive line and thus the conductive line is free from corrosion.

REFERENCES:
patent: 5137597 (1992-08-01), Curry, II et al.
patent: 5219792 (1993-06-01), Kim et al.
patent: 5334552 (1994-08-01), Homma
patent: 5429995 (1995-07-01), Nishiyama et al.
patent: 5444019 (1995-08-01), Chen et al.
patent: 5468682 (1995-11-01), Homma

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