Method for forming conductive film for semiconductor device

Details Method for forming conductive film for semiconductor device Method for forming conductive film for semiconductor device

1998-06-16

2000-07-04

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438507, 438509, 438550, 438565, 438568, 438680, H01L 2144

Patent

active

060838337

ABSTRACT:
A method for forming a conductive film for a semiconductor device wherein a conductive film is formed on each wafer loaded in a boat of a vertical furnace of a low pressure chemical vapor deposition apparatus provided with a chamber, a reaction tube in a center portion of the chamber, a boat loaded in the reaction chamber and a heater surrounding the chamber. The method includes a decompression step for reducing pressure in the chamber to a vacuum condition, a deposition step for depositing a conductive film on each wafer by introducing reaction gas into the chamber in the vacuum condition, a purge step for removing from the chamber toxic gas generated in the deposition step, and a normal pressure step for increasing pressure and temperature in the chamber, wherein the pressure increases from the normal pressure step and the temperature increases from the purge step. The method obtains deposition films of high quality which have similar properties since the conductive film deposited on each wafer in an annealing process of the normal pressure step has little shrinkage.

REFERENCES:
patent: 5049524 (1991-09-01), Kuo et al.
patent: 5192708 (1993-03-01), Beyer et al.
patent: 5234869 (1993-08-01), Mikata et al.
patent: 5480300 (1996-01-01), Okoshi et al.
patent: 5567152 (1996-10-01), Morimoto
patent: 5813851 (1998-09-01), Nakao

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