Method for forming complementary MOS device having asymmetric re

Details Method for forming complementary MOS device having asymmetric re Method for forming complementary MOS device having asymmetric re

1997-06-20

1998-11-03

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438217, 438227, 438231, 438286, 438302, 438303, 438305, 438307, 438525, 257344, 257346, 257369, H01L 218238

Patent

active

058307885

ABSTRACT:
A complementary semiconductor device which includes: a semiconductor substrate having a principal surface, with a first region doped with an impurity of a first conductivity type and a second region doped with an impurity of a second conductivity type; a first MOS transistor provided on the second region; and a second MOS transistor provided on the first region. In such a complementary semiconductor device, at least one of the first MOS transistor and the second MOS transistor is an asymmetric MOS transistor of the same conductivity type as the conductivity type of the corresponding region which is either the first region or the second region. The asymmetric MOS transistor further includes an asymmetric impurity diffusion region having a nonuniform impurity concentration distribution in the channel region along a channel length direction such that an impurity concentration on a source side is set to be higher than an impurity concentration on a drain side, and an impurity concentration of a portion of the semiconductor substrate beneath the first source region is lower than the impurity concentration on the source side of the asymmetric impurity diffusion region.

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