Method for forming capacitor of semiconductor device

Details Method for forming capacitor of semiconductor device Method for forming capacitor of semiconductor device

2005-04-26

2005-04-26

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06884678

ABSTRACT:
A method for forming of a capacitor wherein an etching barrier layer comprising a stacked structure of a nitride film and a tantalum oxide film is disclosed. The method comprises the steps of: forming an etching barrier layer on an interlayer insulating film having a storage electrode contact plug therein, the etching barrier layer comprising a stacked structure of a nitride film and a tantalum oxide film; forming an oxide film on the etching barrier layer; selectively etching the oxide film and the etching barrier layer to form an opening exposing the storage electrode contact plug; depositing a storage electrode layer on the bottom and the inner walls of the opening; and removing the oxide film, whereby forming a storage electrode.

REFERENCES:
patent: 6576947 (2003-06-01), Kim
patent: 6656789 (2003-12-01), Lee et al.
patent: 2001-0056241 (2001-07-01), None
patent: 2002-0052655 (2002-07-01), None

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