Method for forming capacitor of semiconductor device

Details Method for forming capacitor of semiconductor device Method for forming capacitor of semiconductor device

2005-05-17

2005-05-17

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S396000

Reexamination Certificate

active

06893913

ABSTRACT:
Disclosed is a method for forming a capacitor of a semiconductor device. The forming method comprises the step of forming an interlayer insulating film on a semiconductor substrate formed with a bit line. A contact plug to be in contact with the substrate is formed within the interlayer insulating film. A storage electrode is formed on the interlayer insulating film in such a manner that the storage electrode comes in contact with the contact plug. A dielectric film composed of a single composite film of Ta2O5(X)Y2O3(1−X) is also formed on the storage electrode according to ALD (Atomic Layer Deposition) technology. A diffusion barrier film is deposited on the dielectric film, and a plate electrode is formed on the diffusion barrier film. The present invention can provide a capacitor having sufficient capacitance necessary for a stable device operation by applying the Ta2O5(X)Y2O3(1−X) single composite film to the dielectric film.

REFERENCES:
patent: 6014310 (2000-01-01), Bronner et al.
patent: 6198124 (2001-03-01), Sandu et al.
patent: 6207561 (2001-03-01), Hwang et al.
patent: 6423593 (2002-07-01), Yamamoto et al.
patent: 6461911 (2002-10-01), Ahn et al.
patent: 20030031793 (2003-02-01), Chang et al.
patent: 2000 68160 (2000-03-01), None
patent: 2000 353787 (2000-11-01), None

Affiliated with

Also associated with

Rating

Method for forming capacitor of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming capacitor of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming capacitor of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3396899