Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-21
2007-08-21
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S239000, C438S386000, C438S393000, C438S396000, C438S785000
Reexamination Certificate
active
11122597
ABSTRACT:
Disclosed is a method for forming a capacitor of a semiconductor device, which can improve a leakage current characteristic in applying HfxAlyOz as a dielectric film. In such a method, HfxAlyOz thin films are deposited on a storage electrode to form an HfxAlyOz dielectric film and a plate electrode is formed on the dielectric film. The HfxAlyOz dielectric film consists of laminated HfxAlyOz thin films which are different in compositions of Hf and Al such that the lower HfxAlyOz thin film adjoining the storage electrode has a larger composition ratio of Al than that of Hf and the upper HfxAlyOz thin film has a larger composition ratio of Hf than that of Al, and the upper HfxAlyOz thin film is subjected to heat treatment under an oxygen atmosphere after its deposition.
REFERENCES:
patent: 6753618 (2004-06-01), Basceri et al.
patent: 7115942 (2006-10-01), Wang
patent: 2004/0238872 (2004-12-01), Lee et al.
patent: 2004/0266217 (2004-12-01), Kim et al.
patent: 2005/0260347 (2005-11-01), Narwankar et al.
patent: 2005/0260357 (2005-11-01), Olsen et al.
patent: 2006/0006454 (2006-01-01), Wang
patent: 10-20040060309 (2004-07-01), None
Kil Deok Sin
Park Ki Seon
Roh Jae Sung
Sohn Hyun Chul
Duong Khanh
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Wilczewski Mary
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