Method for forming capacitor of semiconductor device

Details Method for forming capacitor of semiconductor device Method for forming capacitor of semiconductor device

2007-08-21

2007-08-21

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21006, C257SE21171

Reexamination Certificate

active

11124222

ABSTRACT:
Disclosed is a method for forming a capacitor of a semiconductor device capable of improving the film quality of a dielectric film. The method includes the steps of providing a semiconductor substrate having a storage node contact; forming a metal storage electrode on the substrate; forming a dielectric film using any one chosen from a group including a single film made of HfO2, a single film made of Al2O3, and a lamination film made of HfO2and Al2O3on the metal storage electrode; performing CF4plasma treatment on the dielectric film; and forming a metal plate electrode on the dielectric film.

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