Method for forming capacitor of semiconductor device

Details Method for forming capacitor of semiconductor device Method for forming capacitor of semiconductor device

2006-06-06

2006-06-06

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S253000, C438S693000, C257S534000

Reexamination Certificate

active

07056803

ABSTRACT:
Disclosed is a method for forming a capacitor of a semiconductor device. The method comprises the steps of: forming a nitride film for storage electrode on a semiconductor substrate; forming an oxide film for storage electrode on the nitride film; selectively etching the oxide film and the nitride film to define a storage electrode region; forming a conductive layer for storage electrode on the semiconductor substrate including the storage electrode region; forming a gap-filling nitride film on the semiconductor substrate to fill up the storage electrode region; performing a CMP process using the oxide film as a polishing stop layer to form a storage electrode; and removing the gap-filling nitride film.

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