Method for forming capacitor of semiconductor device

Details Method for forming capacitor of semiconductor device Method for forming capacitor of semiconductor device

2006-05-30

2006-05-30

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S978000

Reexamination Certificate

active

07052956

ABSTRACT:
Disclosed is a method for manufacturing a capacitor of a semiconductor device. The method includes the steps of providing a substrate having a storage node plug, forming a PE-TEOS layer and a hard mask exposing a storage node contact area on the substrate, forming a storage node contact having a side profile of a positive and negative pattern through etching the PE-TEOS layer, removing the hard mask by etching-back the hard mask, performing an annealing process with respect to a resultant structure, forming a silicon layer on the silicon substrate, which passes through the annealing process, coating a photoresist film on an entire surface of the substrate, forming a storage node electrode by etching-back the photoresist film and the silicon layer, removing a remaining photoresist film, and forming a dielectric layer and a silicon layer on a storage node electrode structure.

REFERENCES:
patent: 6077738 (2000-06-01), Lee et al.
patent: 6281073 (2001-08-01), Lee
patent: 6753221 (2004-06-01), Jeon et al.

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