Method for forming capacitor of semiconductor device

Details Method for forming capacitor of semiconductor device Method for forming capacitor of semiconductor device

1997-09-05

1998-12-29

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438397, H01L 218242

Patent

active

058541071

ABSTRACT:
A method for forming a capacitor of a semiconductor device, by which a three dimensional structure of a storage electrode occupying small space but having a great surface area is formed between word lines or bit lines. According to the method, an additional planarization layer is not formed on the word lines or the bit lines, so as to make the three dimensional structure high. Thus, the storage electrode comes to have an enlarged surface area enough to allow the formation of a capacitor with a sufficient capacitance for the high integration of semiconductor devices and thus to improve the properties and the reliability of semiconductor devices.

REFERENCES:
patent: 5097381 (1992-03-01), Vo
patent: 5346844 (1994-09-01), Cho et al.
patent: 5629540 (1997-05-01), Roh et al.
patent: 5688713 (1997-11-01), Linliu et al.
patent: 5691227 (1997-11-01), Kim

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