Method for forming buried plate of trench capacitor

Details Method for forming buried plate of trench capacitor Method for forming buried plate of trench capacitor

2005-11-29

2005-11-29

Kennedy, Jennifer M. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S246000, C438S389000, C438S392000

Reexamination Certificate

active

06969648

ABSTRACT:
A method for forming a buried plate in a trench capacitor is disclosed. The trench is completely filled with a dopant source material such as ASG. The dopant source material is then recessed and the collar material is deposited to form the collar in the upper portion of the trench. After drive-in of the dopants to form the buried plate, the dopant source material is removed and the collar materials may be removed.

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Kotz et al., Chemistry and Chemical Reactivity, Second Edition, Saunders College Publishing, 1991, p. 150.

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