Method for forming buried interconnect structue having stability

Details Method for forming buried interconnect structue having stability Method for forming buried interconnect structue having stability

1997-05-02

1998-10-27

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438488, 438592, 438585, 438618, 438647, 438656, 438657, 438659, 438660, 438655, 438683, 438669, 438684, H01L 218238

Patent

active

058277625

ABSTRACT:
A buried interconnect structure which is stable at the high temperatures involved in BiCMOS, bipolar, and CMOS transistor process flows, and a method of making the same. The interconnect structure is fully insulated and can be used to form stable, doped structures suitable for use as electrodes and gate structures in a CMOS process, or to form low resistance contacts to N or P-type silicon as part of a bipolar process. Because the interconnect structure is buried and fully insulated from surrounding structures, it may be used to form complex, multi-level devices having a minimized geometry and increased circuit density.

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