Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2006-07-12
2010-10-12
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S049000, C438S053000, C438S421000, C438S422000, C257SE21573
Reexamination Certificate
active
07811848
ABSTRACT:
A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches.
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Barlocchi Gabriele
Corona Pietro
Faralli Dino
Villa Flavio Francesco
Graybeal Jackson LLP
Jorgenson Lisa K.
Rusyn Paul F.
STMicroelectronics S.R.L.
Trinh Michael
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