Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-17
2009-06-02
Zarneke, David A (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21508
Reexamination Certificate
active
07541273
ABSTRACT:
A method for forming bumps is disclosed. First, a substrate having a surface and an under bump metallurgy layer formed thereon is provided, and a portion of the under bump metallurgy layer is removed thereafter. Next, a mask having a metal layer thereon is disposed over the surface of substrate, in which the mask includes at least one opening for exposing the under bump metallurgy layer. Subsequently, a metal is disposed in the opening and the mask having the metal layer is removed.
REFERENCES:
patent: 5462638 (1995-10-01), Datta et al.
patent: 6767818 (2004-07-01), Chang et al.
patent: 2004/0259345 (2004-12-01), Yu et al.
Hsieh Chueh-An
Tai Li-Cheng
Advanced Semiconductor Engineering Inc.
Hsu Winston
Zarneke David A
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