Method for forming bottle shaped trench

Details Method for forming bottle shaped trench Method for forming bottle shaped trench

2005-10-11

2005-10-11

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000, C438S474000

Reexamination Certificate

active

06953723

ABSTRACT:
Disclosed is a method for forming a bottle shaped trench. The method of the present invention includes steps of providing a substrate; forming a plurality of operation layers on the substrate; forming a photoresist layer on the operation layers to define a predetermined position; forming a trench according to the predetermined position; implanting predetermined ions, which reduces oxidizing rate of the sidewall of the trench, into the upper sidewall of the trench; oxidizing the sidewall of the trench to form an oxide layer, in which the portion of the oxide layer formed at the portion of the sidewall implanted with the ions is thin, while the portion of the oxide layer formed at the portion of the sidewall not implanted with the ions is thick; and removing the oxide layer to form a bottle shaped trench.

REFERENCES:
patent: 5837612 (1998-11-01), Ajuria et al.
patent: 6018174 (2000-01-01), Schrems et al.
patent: 6071823 (2000-06-01), Hung et al.
patent: 6194755 (2001-02-01), Gambino et al.
patent: 6232171 (2001-05-01), Mei
patent: 6426254 (2002-07-01), Kudelka et al.
patent: 6716757 (2004-04-01), Lin et al.

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