Method for forming bottle-shaped trench

Details Method for forming bottle-shaped trench Method for forming bottle-shaped trench

2005-08-16

2005-08-16

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S249000, C438S389000, C438S255000, C438S398000

Reexamination Certificate

active

06929998

ABSTRACT:
A method for forming a bottle-shaped trench. A conductive layer surrounded by a doped layer is filled in a lower portion of a trench formed in a substrate. A doping region is formed in the substrate around the doped layer by a heat treatment. A collar silicon nitride layer is formed over an upper portion of the sidewall of the trench. The conductive layer and the doped layer are successively removed using the collar silicon nitride layer as a mask. The doping region is partially oxidized to form a doped oxide region thereon. The doped oxide region is removed to form a bottle-shaped trench. A conformable rugged polysilicon layer is formed in the lower portion of the bottle-shaped trench.

REFERENCES:
patent: 6455369 (2002-09-01), Forster et al.
patent: 2003/0153158 (2003-08-01), Ho et al.
Wolf et al., Silicon Processing for VLSI Era, Lattice Press, vol. 1, pp 56-58, 200, 242, 264 and 532.

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