Method for forming barrier metal of semiconductor device

Details Method for forming barrier metal of semiconductor device Method for forming barrier metal of semiconductor device

2006-10-17

2006-10-17

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S629000, C438S630000

Reexamination Certificate

active

07122474

ABSTRACT:
A method for forming a barrier metal of a semiconductor device wherein a TiSiN layer having an atomic layer thickness is deposited by performing deposition of an Si layer inside a contact hole of a semiconductor device using an atomic layer deposition process and by performing deposition of a precursor layer on the Si layer. By repetition of this ALD process, the TiSiN layer is thickly formed at a desired thickness. Then, the TiSiN layer is plasma processed under the atmosphere of a nitrogen gas and a hydrogen gas, or an ammonia gas, and thus impurities are removed from the TiSiN layer. Therefore, it is easy to thickly form the TiSiN layer for the barrier metal. It is possible to reduce resistivity of the TiSiN layer to a relatively low level. Thereby, it is possible to decrease a contact resistance of the TiSiN layer and, further, to enhance an electrical characteristic of the semiconductor device.

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Jai-Sik Min, Hyung-Sang Park, Sang-Won Kang, Metal-orgnaic atomic-layer deposition of titanium-silicon-nitride films, Applied Physics Letters Volumne 75, No. 11, Sep. 13, 1999.

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