Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-12-09
1997-08-26
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438289, 438298, 438450, H01L 21265
Patent
active
056610459
ABSTRACT:
A method for forming semiconductor devices includes a low energy implant for tailoring the electrical characteristics of the semiconductor devices. Using the low energy implant, narrow width devices such as access transistors in an SRAM cell, can be fabricated with a low threshold voltage (Vt). The low energy implant is performed on the active areas of a silicon substrate following field isolation and field implant. For an n-conductivity access transistor, the low energy dopant can be an n-type dopant such as phosphorus, arsenic or antimony.
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Dennison Charles
Lowrey Tyler
Manning Monte
Rhodes Howard
Gratton Stephen A.
Micro)n Technology, Inc.
Mulpuri S.
Niebling John
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