Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-29
2011-03-29
Chambliss, Alonzo (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S638000, C438S508000, C438S508000
Reexamination Certificate
active
07915158
ABSTRACT:
A method for forming an on-chip high frequency electro-static discharge device is described. In one embodiment, a wafer with a multi-metal level wiring is provided. The wafer includes a first dielectric layer with more than one electrode formed therein, a second dielectric layer disposed over the first dielectric layer with more than one electrode formed therein and more than one via connecting the more than one electrode in the first dielectric layer to a respective more than one electrode in the second dielectric layer. The more than one via is misaligned a predetermined amount with the more than one electrodes in the first dielectric layer and the second dielectric layer. The at least one of the misaligned vias forms a narrow gap with another misaligned via. A cavity trench is formed through the second dielectric layer between the narrow gap that separates the misaligned vias.
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Ding Hanyi
Feng Kai D.
He Zhong-Xiang
Liu Xuefeng
Stamper Anthony K.
Canale Anthony J.
Chambliss Alonzo
Hoffman Warnick LLC
International Business Machines - Corporation
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