Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-22
2008-07-22
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S408000, C257S412000
Reexamination Certificate
active
11336160
ABSTRACT:
A method is described for manufacturing an n-MOS semiconductor transistor. Recesses are formed in a semiconductor substrate adjacent a gate electrode structure. Silicon is embedded in the recesses via a selective epitaxial growth process. The epitaxial silicon is in-situ alloyed with substitutional carbon and in-situ doped with phosphorus. The silicon-carbon alloy generates a uniaxial tensile strain in the channel region between the source and drain, thereby increasing electron channel mobility and the transistor's drive current. The silicon-carbon alloy decreases external resistances by reducing contact resistance between source/drain and silicide regions and by reducing phosphorous diffusivity, thereby permitting closer placement of the transistor's source/drain and channel regions.
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Ghani Tahir
Glass Glenn A.
Hattendorf Michael L.
Murthy Anand S.
Westmeyer Andrew N.
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