Method for forming an electronic structure using etch

Details Method for forming an electronic structure using etch Method for forming an electronic structure using etch

2005-02-01

2005-02-01

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S585000, C438S592000, C438S596000, C438S655000, C438S683000, C438S947000

Reexamination Certificate

active

06849487

ABSTRACT:
A method of forming a conductive structure having a length that is less than the length define by photolithographic patterning. A silicon layer (12) is formed in a MeOx dielectric layer (11) is photolithographically patterned to a predetermined first length. A metal layer (31) is formed conformally to at least the sidewalls of the silicon layer and then is reacted with the silicon to form a metal silicide (41). In particular, metal silicide abutments (411,412) are formed contiguous to sidewalls (421,422) of a reduced conductor (42). The remaining metal layer and the metal silicide are etched away, resulting in a conductor having predetermined second length that is less than the predetermined first length.

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