Method for forming an electrode of semiconductor device capacito

Details Method for forming an electrode of semiconductor device capacito Method for forming an electrode of semiconductor device capacito

1998-12-29

2000-11-21

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 438398, 438253, 257300, 257306, 257532, H01L 2120, H01L 218242, H01G 406, H01G 430

Patent

active

061502162

ABSTRACT:
A method for forming an electrode of semiconductor device capacitor is disclosed. The method comprises forming a dielectric layer on a semiconductor substrate and then using photolithographic method to etch a trench through the dielectric layer to expose specific part of the semiconductor substrate. A polysilicon layer is then formed over the dielectric layer and filled the trench. The polysilicon layer is patterned by a photoresist layer and etched back to the dielectric layer, then a polysilicon rod is formed. A spacer method is used to form an amorphized silicon spacer is sidewall of the polysilicon rod. The polysilicon rod is then implanted to form an amorphized polysilicon layer on top surface of the polysilicon rod. Final hemispherical grain silicon is formed on the spacer and the amorphized polysilicon layer to increase the surface area of the polysilicon rod. Thereby, an electrode of a semiconductor device capacitor is formed, and the capacitance of capacitor is enhanced.

REFERENCES:
patent: 5792691 (1998-08-01), Koga
patent: 5843834 (1998-12-01), Naem
patent: 5877052 (1999-03-01), Lin et al.
patent: 5885886 (1999-03-01), Lee
patent: 5937307 (1999-08-01), Jenq et al.
patent: 5994197 (1999-11-01), Liao
patent: 6013546 (2000-01-01), Gardener et al.

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