Method for forming an electrical interconnection providing...

Details Method for forming an electrical interconnection providing... Method for forming an electrical interconnection providing...

2005-01-03

2009-02-24

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S653000

Reexamination Certificate

active

07494917

ABSTRACT:
In a fabrication method for forming an electrical interconnection of CVD tungsten film, a contact hole is formed in a dielectric layer. A lower conductive layer is formed in the contact hole and over the dielectric layer. A portion of the lower conductive layer is removed. As a result, the dielectric layer is exposed. An upper conductive layer is formed over the lower conductive layer and over the dielectric layer. The lower conductive layer has a rough surface and the upper conductive layer has a smooth surface. In this manner, following patterning of conductive stripes over the conductive layer, residue is mitigated, and thus, inadvertent interconnection of neighboring stripes is eliminated.

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