Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-02-18
2000-02-08
Fahmy, Wael
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438655, 438656, 438660, 438683, H01L 21283
Patent
active
060228016
ABSTRACT:
A method for forming a conductive contact having an atomically flat interface is disclosed. A layer containing cobalt and titanium is deposited on a silicon substrate and the resulting structure annealed in a nitrogen containing atmosphere at about 500.degree. C. to about 700.degree. C. A conductive material is deposited on top of the structure formed on anneal. A flat interface, which prevents diffusion of conductive materials into the underlying silicon substrate is formed. The method can be used to form contacts for very small devices and shallow junctions, such as are required for ULSI shallow junctions.
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IBM Docket No. BU9-93-016V entitled Low Temperature Formation of Low Resistivity Titanium Silicide now USPTO S/N 08/586,046, filed Jan. 16, 1996. See attached application as filed, pp. 1-26, w/Disclosure BU8-95-0143 pp. 1-18, w/Figures 1-7 on 5 pages of drawings.
Domenicucci Anthony G.
Gignac Lynne M.
Wang Yun-Yu
Wildman Horatio S.
Wong Kwong Hon
Anderson Jay H.
Eaton Kurt
Fahmy Wael
International Business Machines - Corporation
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