Method for forming amorphous carbon film

Details Method for forming amorphous carbon film Method for forming amorphous carbon film

2011-04-12

2011-04-12

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C427S249100, C257SE21005, C257SE21041, C257SE21270

Reexamination Certificate

active

07923377

ABSTRACT:
An amorphous carbon film forming apparatus includes a supporting electrode that is connected to ground and supports a substrate, a counter electrode that is disposed so as to face the supporting electrode and has a mixed-gas injection orifice, a chamber containing the supporting electrode and the counter electrode, and a DC pulse generator having a pulse source that applies a DC pulse voltage between the supporting electrode and the counter electrode. An amorphous carbon film is formed by supplying a mixed gas between the supporting electrode and the counter electrode such that the percentage of the acetylene gas relative to the carrier gas is 0.05% by volume or more and 10% by volume or less, and by generating plasma while a DC pulse voltage having a pulse width of 0.1 μsec or more and 5.0 μsec or less is applied to the counter electrode.

REFERENCES:
patent: 5073785 (1991-12-01), Jansen et al.
patent: 2003/0230938 (2003-12-01), Hatano et al.
patent: 2004/0161534 (2004-08-01), Saito et al.
patent: 2004-270022 (2004-09-01), None

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