Method for forming a wiring layer a semiconductor device

Details Method for forming a wiring layer a semiconductor device Method for forming a wiring layer a semiconductor device

1996-11-05

1998-12-01

Everhart, Garidad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438648, 438685, 438672, H01L 21441

Patent

active

058438432

ABSTRACT:
A method for forming wiring layer of a semiconductor device for improving the step coverage and filling of the contact hole is disclosed. After forming an underlayer of the wiring layer on a semiconductor substrate, the surface of the underlayer is hydrogen-treated by exposing the underlayer to hydrogen plasma or hydrogen radicals to thereby H-terminate the surface portion of the underlayer. Thus, the characteristics of the underlying layer is improved. When depositing a metal such aluminum or aluminum alloy on the underlayer to thereby form a first conductive layer, large grains of the deposited metal are obtained. The step coverage of the deposited metal layer is enhanced and the mobility of the metal grains is increased. When sputtering the metal at a high temperature or when heat-treating the metal layer which has been formed at a low temperature, the filling of the metal into the contact hole is improved.

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