Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-04-29
1997-08-05
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438645, 438672, 438648, 438712, H01L 21283
Patent
active
056542348
ABSTRACT:
A method for the fabrication of an ohmic, low resistance contact to silicon is described using a CVD deposited tungsten plug provided with Ti/TiN barrier metallurgy. The method provides for a glass insulator layer deposited on the silicon. After the glass is flowed to planarize its surface, contact holes are patterned in the glass exposing the silicon substrate. The Ti/TiN barrier metallurgy is deposited by sputtering which, because of inferior edge coverage, results in a sidewall with a negative taper. Subsequent deposition of the tungsten results in a tungsten plug with an exposed void. The method taught by this invention deposits first a thin layer of tungsten whose thickness is governed by the amount of overhang caused by the tapered sidewall. An anisotropic dry etch step is then performed to achieve a vertical sidewall of tungsten. The remaining tungsten is then deposited to fill the contact opening without the occurrence of voids.
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Shih Tsu
Yu Chen-Hua Douglas
Quach T. N.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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