Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-07-12
2000-06-27
Pham, Long
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438426, 438444, H02L 21336
Patent
active
060806273
ABSTRACT:
A method of forming a trench power metal-oxide semiconductor (MOS) transistor over a semiconductor substrate is proposed in the present invention. First, a pad oxide layer is formed on said substrate, a masking layer is then formed on the pad oxide layer. Next, the masking layer and the pad oxide layer are defined the trench pattern, and the substrate is etched to form the trench structure. A gate oxide layer is formed on the outer surface of the trench structure. Then, a conducting layer is fill into said trench structure for serving as a gate structure. The doped areas are formed in the substrate to serve as source structures. Next, the sidewall spacers are formed on sidewalls of the masking layer and the pad oxide layer. A field oxide layer is then formed on the conducting layer.
REFERENCES:
patent: 5256895 (1993-10-01), Bryant et al.
patent: 5824594 (1998-10-01), Kim et al.
patent: 5856230 (1999-01-01), Jang
patent: 5899726 (1999-05-01), Wang et al.
patent: 5913133 (1999-06-01), Lee
Chang Yao-Chi
Fan Chun-Liang
Lai Shih-Chi
Yuan Tien-Min
Mosel Vitelic Inc.
Novick Harold L.
Pham Long
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