Method for forming a trench capacitor

Details Method for forming a trench capacitor Method for forming a trench capacitor

2005-11-21

2008-09-16

Baumeister, Bradley W. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S248000, C438S386000, C438S430000, C257SE21396, C257SE21628

Reexamination Certificate

active

07425486

ABSTRACT:
A method for forming a trench capacitor is presented in the following process steps. A trench is formed on a semiconductor substrate. A first trench dielectric is deposited into the trench without reaching a full height thereof. An etch stop layer is formed on the first trench dielectric and along inner surfaces of the trench. A second trench dielectric is deposited on the etch stop layer. The second trench dielectric and the etch stop layer are removed to expose the first trench dielectric in the trench. A conductive layer is formed on the first trench dielectric in the trench, such that the conductive layer, the first trench dielectric and the semiconductor substrate function as a trench capacitor.

REFERENCES:
patent: 6326275 (2001-12-01), Harrington et al.
patent: 6465351 (2002-10-01), Jeong
patent: 6495411 (2002-12-01), Mei
patent: 7250336 (2007-07-01), Regul et al.
patent: 2005/0280007 (2005-12-01), Hsu et al.
patent: 2006/0060909 (2006-03-01), Chi et al.

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