Method for forming a thin semiconductor film and a plasma CVD ap

Details Method for forming a thin semiconductor film and a plasma CVD ap Method for forming a thin semiconductor film and a plasma CVD ap

1996-02-15

1997-04-08

Breneman, R. Bruce

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438 96, H01L 21302

Patent

active

056187580

ABSTRACT:
A method for producing a thin semiconductor film according to the present invention includes the steps of: placing a group-IV compound or a derivative thereof in a plasma state; decomposing the group-IV compound or the derivative thereof into active species; and depositing the active species on a substrate, wherein energy for generating plasma is intermittently supplied at a supply time interval which is equal to or less than a reciprocal of {(secondary reaction rate constant of a source gas reacting with active species other than long-life active species within the plasma).times.(number of source gas molecules)}.

REFERENCES:
patent: 5093703 (1992-03-01), Minami et al.
patent: 5487786 (1994-12-01), Chida et al.
Appl. Phys. Lett., vol. 53, No. 14, pp. 1263-1265, 1988, "Effects of low-frequency modulation on rf discharge chemical vapor deposition".
Appl. Phys. Lett., vol. 57, No. 16, pp. 1616-1618, 1990 "Powder-free plasma chemical vapor deposition of hydrogenated amorphous silicon with high rf power density using modulated rf discharge".
Applied Physics, vol.62, No. 7, pp. 699-702, 1993 "Formation of powder in rf silane plasmas and its growth suppression".

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