Method for forming a thin, high quality buffer layer in a...

Details Method for forming a thin, high quality buffer layer in a... Method for forming a thin, high quality buffer layer in a...

2006-07-04

2006-07-04

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S585000

Reexamination Certificate

active

07071051

ABSTRACT:
According to one exemplary embodiment, a method for forming a field-effect transistor on a substrate comprises a step of forming a buffer layer on the substrate, where the buffer layer comprises ALD silicon dioxide. The buffer layer can be formed by utilizing a silicon tetrachloride precursor in an atomic layer deposition process, for example. The buffer layer comprises substantially no pin-hole defects and may have a thickness, for example, that is less than approximately 5.0 Angstroms. The method further comprises forming a high-k dielectric layer over the buffer layer. The high-k dielectric layer may be, for example, hafnium oxide, zirconium oxide, or aluminum oxide. According to this exemplary embodiment, the method further comprises forming a gate electrode layer over the high-k dielectric layer. The gate electrode layer may be polycrystalline silicon, for example.

REFERENCES:
patent: 6563183 (2003-05-01), En et al.
patent: 2005/0048765 (2005-03-01), Kim

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