Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-05-17
2005-05-17
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S770000, C438S775000, C438S764000
Reexamination Certificate
active
06893982
ABSTRACT:
A method for forming a thin film on a gate electrode reduces oxidation of the gate electrode during a re-oxidation process to fix the damage to the gate oxide film caused during the formation of the gate electrode pattern. The gate electrode pattern formed in this manner will have reduced defects after re-oxidation. After a gate oxide film is formed on a substrate, a gate electrode pattern is formed on the gate oxide film through an etching process. A thin film that includes nitride is then continuously formed on the gate oxide film and on the gate electrode by utilizing a deposition rate difference between the thin film on the gate oxide film and on the thin film forming the gate electrode. Because of the thin film formed on the gate electrode, oxidation of the gate electrode is reduced during the re-oxidation of the gate oxide film.
REFERENCES:
patent: 5706164 (1998-01-01), Jeng
patent: 5710454 (1998-01-01), Wu
patent: 6291275 (2001-09-01), Yamazaki et al.
patent: 6407431 (2002-06-01), Yamazaki et al.
Berry Renee R.
Harness & Dickey & Pierce P.L.C.
Nelms David
Samsung Electronics Co,. Ltd.
LandOfFree
Method for forming a thin film, methods for forming a gate... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a thin film, methods for forming a gate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a thin film, methods for forming a gate... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3436719