Method for forming a textured surface on a semiconductor substra

Details Method for forming a textured surface on a semiconductor substra Method for forming a textured surface on a semiconductor substra

1998-11-19

2000-12-26

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438964, H01L 218247

Patent

active

061658448

ABSTRACT:
A method is provided for fabricating a tunneling oxide layer over a semiconductor substrate with a textured surface. The method is suitable for a semiconductor substrate, such as a silicon substrate, having a polysilicon layer formed over the substrate. The method has several steps of performing a thermal oxidation process to over oxidize the polysilicon layer so as to form an interfacial oxide layer between the substrate and the polysilicon layer, which actually is oxidized as an oxide layer. Due to material property of polysilicon, a textured surface is naturally formed on a top of the substrate. After removing the oxide layer and the interfacial oxide layer, a tunneling oxide layer is formed over the substrate with the textured surface.

REFERENCES:
patent: 5504022 (1996-04-01), Nakanishi et al.
patent: 5521108 (1996-05-01), Rostoker et al.
patent: 5879978 (1999-03-01), Ra

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