Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-07-11
2006-07-11
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S253000, C438S692000, C438S701000, C438S723000, C438S740000, C438S756000, C438S757000, C216S089000
Reexamination Certificate
active
07074725
ABSTRACT:
An improved method of manufacturing a capacitor on a semiconductor substrate is disclosed. A portion of an insulation film on a semiconductor substrate is etched to form a first opening in the insulation film. A passivation film is formed on the insulation film and within the first opening thereof. A portion of the passivation film on a bottom of the first opening is thinner than portions of the passivation film on the insulation film and on a sidewall of the first opening. The passivation film is etched to expose the bottom of the first opening.
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Ahn Tae-Hyuk
Hong Jong-Seo
Hong Jun-Sik
Hong Young-Ki
Chen Eric B.
Marger & Johnson & McCollom, P.C.
Norton Nadine G.
Samsung Electronics Co,. Ltd.
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