Method for forming a storage node in a semiconductor memory usin

Details Method for forming a storage node in a semiconductor memory usin Method for forming a storage node in a semiconductor memory usin

1997-05-15

1998-06-30

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, H01L 218242

Patent

active

057733422

ABSTRACT:
In a semiconductor memory, for forming a storage node of an information storage capacitor formed above a semiconductor substrate, an interlayer insulator film is formed above the semiconductor substrate, and a contact hole is formed to penetrate through the interlayer insulator film and to reach the semiconductor substrate. A polysilicon film is deposited to fill the contact hole and to cover the interlayer insulator film, and ions are implanted into the polysilicon film to convert a surface layer of the polysilicon film into an amorphous state, so that the surface of polysilicon film is smoothened. On the polysilicon film, a resist mask for patterning of the storage node is formed by a photolithography, and, and the polysilicon film is etched using the resist mask to form the storage node.

REFERENCES:
patent: 5429972 (1995-07-01), Anjum et al.
patent: 5656529 (1997-08-01), Fukase
patent: 5658381 (1997-08-01), Thakur et al.

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