Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-07
2007-08-07
Hu, Shouxiang (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S239000, C438S398000, C438S399000, C438S255000
Reexamination Certificate
active
10896442
ABSTRACT:
Described are integrated circuit electrodes and method for fabricating an electrode, which include, in an embodiment forming a silicon, first portion of the electrode in a lower region of a substrate opening. The method may further include forming a second portion of the electrode in the opening and overlying the first portion, the insulative layer encompassing a sidewall of the second portion. The method may further include forming a third portion of the electrode overlying the second portion and overlying at least a portion of the insulative layer, wherein the first portion and the second portion are different materials. In an embodiment, the second portion is a diffusion barrier layer and the third portion is an oxidation resistant layer. In an embodiment, the method includes encompassing a lower sidewall of the third portion with the insulative layer.
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