Method for forming a split gate memory device

Details Method for forming a split gate memory device Method for forming a split gate memory device

2007-02-19

2008-08-26

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C257S315000, C257SE21645, C257SE27081

Reexamination Certificate

active

07416945

ABSTRACT:
A method forms a split gate memory device. A layer of select gate material over a substrate is patterned to form a first sidewall. A sacrificial spacer is formed adjacent to the first sidewall. Nanoclusters are formed over the substrate including on the sacrificial spacer. The sacrificial spacer is removed after the forming the layer of nanoclusters, wherein nanoclusters formed on the sacrificial spacer are removed and other nanoclusters remain. A layer of control gate material is formed over the substrate after the sacrificial spacer is removed. A control gate of a split gate memory device is formed from the layer of control gate material, wherein the control gate is located over remaining nanoclusters.

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