Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-04-14
2011-11-01
Ahmadi, Mohsen (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S267000, C438S593000, C438S689000, C438S706000, C438S734000, C257SE21209, C257SE21645, C257SE21681
Reexamination Certificate
active
08048738
ABSTRACT:
A method for forming a semiconductor device includes forming a dielectric layer over a substrate. The method further includes forming a select gate layer over the dielectric layer. The method further includes etching the select gate layer at a first etch rate to form a first portion of a sidewall of a select gate, wherein the step of etching the select gate layer at the first etch rate includes using an oxidizing agent to oxidize at least a top portion of the substrate underlying the dielectric layer to form an oxide layer. The method further includes etching the select gate layer at a second etch rate lower than the first etch rate to form a second portion of the sidewall of the select gate, wherein the step of etching the select gate layer at the second etch rate includes removing only a top portion of the dielectric layer.
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Hong Cheong Min
Kang Sung-Taeg
Winstead Brian A.
Ahmadi Mohsen
Chiu Joanna G.
Freescale Semiconductor Inc.
Singh Ranjeev
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