Method for forming a silicon oxide layer using spin-on glass

Details Method for forming a silicon oxide layer using spin-on glass Method for forming a silicon oxide layer using spin-on glass

2007-03-20

2007-03-20

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S781000, C257SE21494

Reexamination Certificate

active

10631848

ABSTRACT:
A method is provided for forming silicon oxide layers during the processing of semiconductor devices by applying a SOG layer including polysilazane to a substrate and then substantially converting the SOG layer to a silicon oxide layer using an oxidant solution. The oxidant solution may include one or more oxidants including, for example, ozone, peroxides, permanganates, hypochlorites, chlorites, chlorates, perchlorates, hypobromites, bromites, bromates, hypoiodites, iodites, iodates and strong acids.

REFERENCES:
patent: 4937304 (1990-06-01), Ayama et al.
patent: 4950381 (1990-08-01), Takeuchi et al.
patent: 5310720 (1994-05-01), Shin et al.
patent: 5436398 (1995-07-01), Shimizu et al.
patent: 5494978 (1996-02-01), Shimizu et al.
patent: 5614271 (1997-03-01), Shibuya et al.
patent: 5905130 (1999-05-01), Nakahara et al.
patent: 5907382 (1999-05-01), Kajiura et al.
patent: 5922411 (1999-07-01), Shimizu et al.
patent: 5976618 (1999-11-01), Fukuyama et al.
patent: 6083860 (2000-07-01), Matsuo et al.
patent: 6479405 (2002-11-01), Lee et al.
patent: 11145286 (1999-05-01), None
patent: 2002-0045783 (2002-06-01), None

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