Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-08
2008-11-04
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S288000, C257S619000, C257S623000, C257SE29263, C257SE29264
Reexamination Certificate
active
07446001
ABSTRACT:
A method for making a semiconductor device includes patterning a semiconductor layer, overlying an insulator layer, to create a first active region and a second active region, wherein the first active region is of a different height from the second active region, and wherein at least a portion of the first active region has a first conductivity type and at least a portion of the second active region has a second conductivity type different from the first conductivity type in at least a channel region of the semiconductor device. The method further includes forming a gate structure over at least a portion of the first active region and the second active region. The method further includes removing a portion of the second active region on one side of the semiconductor device.
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International Search Report and Written Opinion.
Ge Lixin
Mathew Leo
Veeraraghavan Surya
Belousov Alexander
Chiu Joanna G.
Freescale Semiconductors, Inc.
Pham Thanh V
Singh Ranjeev
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