Method for forming a semiconductor memory device having a vertic

Details Method for forming a semiconductor memory device having a vertic Method for forming a semiconductor memory device having a vertic

1993-12-10

1995-06-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

054222958

ABSTRACT:
A manufacturing method for a semiconductor memory device including a capacitor having a double fin-shaped structure is provided, wherein a storage electrode is formed by applying a thick planar material capable of being wet-etched between the double fins consisting of conductive layers. The storage electrode is formed by forming a thin, high temperature oxide film having an etching rate which is great. Thus, the resulting memory cell's topography is improved and damage to the storage electrode is decreased.

REFERENCES:
patent: 5071783 (1991-12-01), Taguchi et al.
patent: 5128273 (1992-07-01), Ema
patent: 5164337 (1992-11-01), Ogawa et al.

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