Method for forming a semiconductor memory device having a vertic

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 60, 437919, H01L 2170, H01L 2700

Patent

active

054222958

ABSTRACT:
A manufacturing method for a semiconductor memory device including a capacitor having a double fin-shaped structure is provided, wherein a storage electrode is formed by applying a thick planar material capable of being wet-etched between the double fins consisting of conductive layers. The storage electrode is formed by forming a thin, high temperature oxide film having an etching rate which is great. Thus, the resulting memory cell's topography is improved and damage to the storage electrode is decreased.

REFERENCES:
patent: 5071783 (1991-12-01), Taguchi et al.
patent: 5128273 (1992-07-01), Ema
patent: 5164337 (1992-11-01), Ogawa et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming a semiconductor memory device having a vertic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a semiconductor memory device having a vertic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a semiconductor memory device having a vertic will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-987340

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.