Method for forming a semiconductor device with an inverse-T gate

Details Method for forming a semiconductor device with an inverse-T gate Method for forming a semiconductor device with an inverse-T gate

1998-01-26

1998-11-17

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438595, H01L 21336

Patent

active

058375880

ABSTRACT:
A method for forming an ultra-short channel device with an inverse-T gate lightly-doped drain (ITLDD) structure is disclosed. The method includes forming a silicon layer (14) over a semiconductor substrate (10), and forming a dielectric layer (16) on the silicon layer. Next, a sacrificial region (18) is formed on the dielectric layer to define a gate region. A portion of the sacrificial region is oxidized to form a oxide layer (22) in the sacrificial region and along sidewalls and top surface of the sacrificial region, wherein at least a portion of the sacrificial region is unoxidized. The dielectric layer and a portion of the silicon layer are then removed using the oxide layer as a mask, thereby forming a step in the silicon layer. After removing the oxide layer, the silicon layer is removed using the unoxidized sacrificial region and the dielectric layer as a mask, thereby resulting in an inverse-T structure in the silicon layer. Finally, the substrate is implanted though the inverse-T structure, thereby forming the inverse-T gate lightly-doped drain (ITLDD) structure.

REFERENCES:
patent: 4818715 (1989-04-01), Chao
patent: 4837180 (1989-06-01), Chao
patent: 4906589 (1990-03-01), Chao
patent: 4963504 (1990-10-01), Huang
patent: 4984042 (1991-01-01), Pfiester et al.
patent: 5015598 (1991-05-01), Verhaar
patent: 5015599 (1991-05-01), Verhaar
patent: 5032535 (1991-07-01), Kamijo et al.
patent: 5053849 (1991-10-01), Izawa et al.
patent: 5061647 (1991-10-01), Roth et al.
patent: 5082794 (1992-01-01), Pfiester et al.
patent: 5102815 (1992-04-01), Sanchez
patent: 5120673 (1992-06-01), Itoh
patent: 5147814 (1992-09-01), Takeuchi
patent: 5158903 (1992-10-01), Hori et al.
patent: 5162884 (1992-11-01), Liou et al.
patent: 5175119 (1992-12-01), Matsutani
patent: 5182619 (1993-01-01), Pfiester
patent: 5202277 (1993-04-01), Kameyama et al.
patent: 5238859 (1993-08-01), Kamijo et al.
patent: 5241203 (1993-08-01), Hsu et al.
patent: 5266508 (1993-11-01), Azuma et al.
patent: 5302536 (1994-04-01), Josquin
patent: 5304504 (1994-04-01), Wei et al.
patent: 5314832 (1994-05-01), Deleonibus
patent: 5427971 (1995-06-01), Lee et al.
patent: 5476801 (1995-12-01), Yamazaki et al.
patent: 5545578 (1996-08-01), Park et al.
patent: 5568418 (1996-10-01), Crisenza et al.
patent: 5576574 (1996-11-01), Hong
patent: 5583067 (1996-12-01), Sanchez
patent: 5585295 (1996-12-01), Wu
patent: 5599725 (1997-02-01), Dorleans et al.
patent: 5654218 (1997-08-01), Lee
Tiao-Yuan Huang et al., A New LDD Transistor with Inverse-T Gate Structure, 1987 IEEE, pp. 151-153, No Month.
Hyunsang Hwang et al., Performance and Reliability Optimization of Ultra Short Channel CMOS Device for Giga-bit DRAM Applications, 1995 IEEE, pp. 435-438, No Month.
Mizuki Ono et al., Sub-50 NM Gate Length N-Mosfets with 10 NM Phosphorus Source and Drain Junctions, 1993 IEEE, pp. 119-122, No Month.

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