Method for forming a semiconductor device with a graded lightly-

Details Method for forming a semiconductor device with a graded lightly- Method for forming a semiconductor device with a graded lightly-

1998-01-26

1998-09-22

Wilczewski, M.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438595, 438696, 438965, 148DIG106, 148DIG161, 257344, 257335, 257336, 257900, H01L 21336

Patent

active

058113428

ABSTRACT:
A method for forming a semiconductor device with a graded lightly-doped drain (LDD) structure is disclosed. The method includes providing a semiconductor substrate (10) having a gate region (14 and 16) thereon, followed by forming a pad layer (18) on the substrate and the gate region. Next, ions are implanted into the substrate, and a spacer (22) is formed on sidewalls of the gate region, wherein the first spacer has a concave surface inwards on a surface of the first spacer. Finally, ions are further implanted into the substrate using the gate region and the spacer as a mask, thereby forming a graded doping profile (20) in the substrate.

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Ching-Yeu Wei et al., Buried and Graded/Buried LDD Structures for Improved Hot-Electron Reliability, 1986 IEEE, pp. 380-382.
Ryuichi Izawa et al., The Impact of N-Drain Length and Gate-Drain/Source Overlap on Submicrometer LDD Devices for VLSI, 1987 IEEE, pp. 480-482.
Shigeo Onishi et al., A Mechanism of the Sidewall Process Induced Junction Leakage Current of LDD Structure, J. Electrochem. Soc., vol. 138, No. 5, May 1991, pp. 1439-1443.
Y. Pan et al., Hot-Carrier Induced Electron Mobility and Series Resistance Degradation in LDD NMOSFET's, IEEE Electron Device Letters, vol. 15, No. 12, Dec. 1994, pp. 499-501.

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