Method for forming a semiconductor device having non-volatile me

Details Method for forming a semiconductor device having non-volatile me Method for forming a semiconductor device having non-volatile me

1998-08-12

2000-07-11

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438201, 438258, 438264, 438275, H01L 218238, H01L 21336

Patent

active

06087211&

ABSTRACT:
A semiconductor device having memory cells, high-voltage CMOS transistors, and low-voltage, deep sub-micron CMOS transistors is formed in a process that allows the same low-voltage device parameters to be used regardless of whether the low-voltage transistors are formed with or without the memory cells and the high-voltage CMOS transistors.

REFERENCES:
patent: 4701776 (1987-10-01), Perlegos et al.
patent: 4851361 (1989-07-01), Schumann et al.
patent: 5591658 (1997-01-01), Cacharelis
patent: 5872034 (1999-02-01), Schlais et al.
patent: 5908311 (1999-06-01), Chi et al.

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