Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-01-04
2005-01-04
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S393000, C438S396000, C438S618000, C438S637000
Reexamination Certificate
active
06838332
ABSTRACT:
A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a diffusion or source region (22) of the transistor and contacts a first (75) of the capacitor electrodes. A laterally positioned vertical via (32, 54, 68) and interconnect (99) contacts a second (79) of the capacitor electrodes. A metal interconnect or conductive material (68) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.
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Mendicino Michael A.
Min Byoung W.
Sanchez Hector
Yu Kathleen C.
Brewster William M.
Freescale Semiconductor Inc.
Hill Daniel D.
King Robert L.
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