Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-07-02
1999-03-23
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438770, 438591, H01L 21318
Patent
active
058858709
ABSTRACT:
In one embodiment a non-volatile memory device having improved reliability is formed by oxidizing a first portion of a semiconductor substrate (12) to form a first silicon dioxide layer (14). The first silicon dioxide layer (14) is then annealed and second portion of the silicon substrate, underlying the annealed silicon dioxide layer (16), is then oxidized to form a second silicon dioxide layer (18). The annealed silicon dioxide layer (16) and the second silicon dioxide layer (18) form a pre-oxide layer (20). The pre-oxide layer (20) is then nitrided to form a nitrided oxide dielectric layer (22). A floating gate is then formed overlying the nitrided oxide dielectric layer (22), which serves as the tunnel oxide for the device. Tunnel oxides formed with the inventive process are less susceptible to stress-induced leakage, and therefore, devices with improved data retention and endurance may be fabricated.
REFERENCES:
patent: 4584205 (1986-04-01), Chen et al.
patent: 4894353 (1990-01-01), Ibok
patent: 5057463 (1991-10-01), Bryant et al.
patent: 5198392 (1993-03-01), Fukuda et al.
patent: 5219773 (1993-06-01), Dunn
patent: 5244843 (1993-09-01), Chau et al.
patent: 5254506 (1993-10-01), Hori
patent: 5360769 (1994-11-01), Thakur et al.
patent: 5376593 (1994-12-01), Sandhu et al.
patent: 5393683 (1995-02-01), Mathews et al.
patent: 5397720 (1995-03-01), Kwong et al.
patent: 5407807 (1995-04-01), Okada et al.
patent: 5464783 (1995-11-01), Kim et al.
patent: 5470611 (1995-11-01), Yang et al.
patent: 5478765 (1995-12-01), Kwong et al.
patent: 5504021 (1996-04-01), Hong et al.
patent: 5521127 (1996-05-01), Hori
Anjan Bhattacharyya et al., "A Two-Step Oxidation Process to Improve the Electrical Breakdown Properties of Thin Oxides", pub. Aug. '85 by Journal of the Electrochemical Society Solid-State Science and Technology, pp. 1900-1903.
T. Arakawa et al., "Relationship between Nitrogen Profile and Reliability of Heavily Oxynitrided Tunnel Oxide Films for Flash EEPROMS", published in 1994 at the International Conference on Solid State Devices and Materials Yokohama, pp. 853-855.
J.Ahn et al., "Furnace Nitridation of Thermal SiO2 in Pure N2O Ambient for ULSI MOS Applications", published Feb. 1992 in IEEE Electron Device Letters, vol. 13, No. 2, pp. 117-119.
Umesh Sharma et al., "Vertically Scaled, High Reliability EEPROM Devices with Ultra-thin Oxynitride Films Prepared by RTP in N2O/O2 Ambient", 1992, IEEE, pp. 17.5.1-17.5.4.
Yeong-Seuk Kim et al., Low-Defect-Density and High-Reliability FETMOS EEPROM's . . . , IEEE Electron Device Letters, vol. 14, No. 7, Jul. 3, pp. 342-344.
H. Fukuda, et al., "Novel N2 O-Oxynitridation Technology for Forming Highly Reliable EEPROM Tunnel Oxide Films", IEEE Electron Device Letters, vol. 12, No. 11, Nov. 1991, pp. 587-589.
Anonymous Research Disclosure, Nov. 1979, "Under-grown multiple dielectric-layer semiconductor device", Jan., 1993, Derwent Publications Ltd. pp. 62-63.
Ajuria Sergio A.
Maiti Bikas
Tobin Philip J.
Cooper Kent J.
Motorola Inc.
Mulpuri S.
Niebling John F.
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