Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-30
2009-12-08
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21442
Reexamination Certificate
active
07629220
ABSTRACT:
A non-planar semiconductor device (10) starts with a silicon fin (42). A source of germanium (e.g.24, 26, 28, 30, 32) is provided to the fin (42). Some embodiments may use deposition to provide germanium; some embodiments may use ion implantation (30) to provide germanium; other methods may also be used to provide germanium. The fin (42) is then oxidized to form a silicon germanium channel region in the fin (36). In some embodiments, the entire fin (42) is transformed from silicon to silicon germanium. One or more fins (36) may be used to form a non-planar semiconductor device, such as, for example, a FINFET, MIGFET, Tri-gate transistor, or multi-gate transistor.
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Chaudhari Chandra
Freescale Semiconductor Inc.
Hill Susan C.
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