Method for forming a semiconductor device

Details Method for forming a semiconductor device Method for forming a semiconductor device

2008-10-14

2010-06-15

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S483000, C438S488000

Reexamination Certificate

active

07736982

ABSTRACT:
A method for forming a semiconductor device includes providing a substrate having at least a gate positioned thereon, forming at least a recess in the substrate adjacent to the gate, performing a first selective epitaxial growth (SEG) process to form a first epitaxial layer in the recess, performing an etching process to remove a portion of the first epitaxial layer to expose the substrate, and performing a second SEG process to form a second epitaxial layer on the first epitaxial layer.

REFERENCES:
patent: 6346729 (2002-02-01), Liang et al.
patent: 7397091 (2008-07-01), Suenaga
patent: 2007/0262396 (2007-11-01), Zhu et al.
patent: 2008/0128746 (2008-06-01), Wang
patent: 2008/0265256 (2008-10-01), Lin et al.
patent: 2008/0277735 (2008-11-01), Ko et al.
patent: 2009/0045411 (2009-02-01), Lin et al.

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