Method for forming a semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S672000, C438S637000, C438S620000, C438S508000

Reexamination Certificate

active

11420900

ABSTRACT:
A method for forming a semiconductor device is described. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 Å. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.

REFERENCES:
patent: 6093628 (2000-07-01), Lim et al.
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6291885 (2001-09-01), Cabral et al.
patent: 2002/0121699 (2002-09-01), Cheng et al.
patent: 2003/0082301 (2003-05-01), Chen et al.
patent: 2004/0152307 (2004-08-01), Pan et al.
patent: 2005/0277292 (2005-12-01), Peng et al.
patent: 2007/0099415 (2007-05-01), Chen et al.
China Search Report mailed Apr. 6, 2007.

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